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SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps * Ptot = 3 watts * FZT951 exhibts extremely low equivalent on resistance; RCE(sat) 55m at 4A COMPLEMENTARY TYPES - FZT951 = FZT851 FZT953 = FZT853 PARTMARKING DETAILS DEVICE TYPE IN FULL
FZT951 FZT953
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -15 -5 3 -55 to +150 FZT951 -100 -60 -6 -10 FZT953 -140 -100 UNIT V V V A A W C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 279
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -85 -155 -370 -1080 -935 100 100 75 10 200 200 90 25 120 74 82 350 MIN. -100 -100 -60 -6 TYP. -140 -140 -90 -8 -50 -1 -50 -1 -10 -50 -140 -210 -460 -1240 -1070 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100A IC=-1A, RB1k IC=-10mA* IE=-100A VCB=-80V VCB=-80V, Tamb=100C VCB=-80V VCB=-80V, Tamb=100C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-5A, IB=-500mA* IC=-5A, IB=-500mA* IC=-5A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-2A, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* MHz pF ns ns 2% IC=-100mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V
mV mV mV mV mV mV
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
VBE(sat) VBE(on) hFE
300
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
3 - 280
* Measured under pulsed conditions. Pulse width =300s. duty cycle Spice parameter data is available upon request for this device

nA
FZT951
TYPICAL CHARACTERISTICS
IC/IB=50 IC/IB=10 Tamb=25C 1.6
-55C +25C +175C
1.6
IC/IB=10
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
VCE(sat) - (Volts)
1.4
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
hFE - Typical Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
+100C +25C -55C
VCE=1V 300
1.6 1.4
-55C +25C +100C +175C
IC/IB=10
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
0.01
0.1
1
10 20
0 0.001 0.01 0.1 1 10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
100
-55C +25C +100C +175C
VBE(sat) v IC
Single Pulse Test at Tamb=25C
1.6 1.4
VCE=1V
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
10
1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.1 0.1 1 10 100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
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FZT953
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1k IEBO VCE(sat) -20 -90 -160 -300 -1010 -925 100 100 50 30 200 200 90 50 15 125 65 110 460 MIN. -140 -140 -100 -6 TYP. -170 -170 -120 -8 -50 -1 -50 -1 -10 -50 -115 -220 -420 -1170 -1160 MAX. UNIT V V V V nA A nA A CONDITIONS. IC=-100A IC=-1A, RB1k IC=-10mA* IE=-100A VCB=-100V VCB=-100V, Tamb=100C VCB=-100V VCB=-100V, Tamb=100C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-4A, IB=-400mA* IC=-4A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-3A, VCE=-1V* IC=-4A, VCE=-1V* IC=-10A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-2A, IB1=-200mA IB2=200mA, VCC=-10V
Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer
VBE(sat) VBE(on) hFE
mV mV
300
Transition Frequency Output Capacitance Switching Times
fT Cobo ton toff
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
3 - 282

nA mV mV mV mV
FZT953
TYPICAL CHARACTERISTICS
1.6 IC/IB=50 IC/IB=10 Tamb=25C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20
-55C +25C +175C
IC/IB=10
VCE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC - Collector Current (Amps)
VCE(sat) - (Volts)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
+100C +25C -55C
VCE=1V 300
1.6
hFE - Typical Gain
1.4
-55C +25C +100C +175C
IC/IB=10
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2
200
100
0.01
0.1
1
10 20
0
0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
10
-55C +25C +100C +175C
VBE(sat) v IC
Single Pulse Test at Tamb=25C
1.6 1.4
VCE=1V
IC - Collector Current (Amps)
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20
1
0.1
D.C. 1s 100ms 10ms 1.0ms 0.1ms
0.01 0.1
1
10
100
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
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